Invention Grant
- Patent Title: High voltage semiconductor devices having improved electric field suppression
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Application No.: US16220979Application Date: 2018-12-14
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Publication No.: US11538769B2Publication Date: 2022-12-27
- Inventor: Stephen Daley Arthur , Liangchun Yu , Nancy Cecelia Stoffel , David Richard Esler , Christopher James Kapusta
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Fitch, Even, Tabin & Flannery LLP
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L29/06 ; H01L29/16 ; H01L23/00
Abstract:
A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric field strength above the E-field suppression layer is below a dielectric strength of an adjacent material when the semiconductor device is operating at or below a maximum voltage.
Information query
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