Invention Grant
- Patent Title: Photoelectric conversion device and imaging apparatus
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Application No.: US16648981Application Date: 2018-09-07
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Publication No.: US11538863B2Publication Date: 2022-12-27
- Inventor: Yu Kato , Yuta Inaba , Masato Kanno , Hideaki Mogi , Miki Kimijima , Sae Miyaji
- Applicant: Sony Corporation , SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Tokyo; JP Kanagawa
- Assignee: Sony Corporation,SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: Sony Corporation,SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Tokyo; JP Kanagawa
- Agency: K&L Gates LLP
- Priority: JPJP2017-180653 20170920
- International Application: PCT/JP2018/033173 WO 20180907
- International Announcement: WO2019/058995 WO 20190328
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L51/00

Abstract:
[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.
[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
Public/Granted literature
- US20200295088A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING APPARATUS Public/Granted day:2020-09-17
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