- 专利标题： Silicon carbide semiconductor device
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申请号： US17117413申请日： 2020-12-10
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公开(公告)号： US11538935B2公开(公告)日： 2022-12-27
- 发明人: Tsuyoshi Yamamoto , Ryota Suzuki , Yusuke Yamashita
- 申请人： DENSO CORPORATION
- 申请人地址： JP Kariya
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JPJP2019-224343 20191212
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L29/10 ; H01L21/04
摘要：
A SiC semiconductor device includes a main cell region and sense cell region being electrically isolated by an element isolation portion. The SiC semiconductor device includes a substrate, a first impurity region, a first current dispersion layer, first deep layers, a second current dispersion layer, a second deep layer, a base region, a trench gate structure, a second impurity region, first electrodes and a second electrode. The second impurity region, the first electrodes, and the second electrode are disposed at the main cell region and the sense cell region to form a vertical semiconductor element. The vertical semiconductor element allows a current flowing between the first electrode and the second electrode through a voltage applied to the gate electrode. The spacing interval between the deep layers at the element isolation portion is shorter than or equal to a spacing interval between the deep layers at the main cell region.
公开/授权文献
- US20210184031A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 公开/授权日：2021-06-17
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