Invention Grant
- Patent Title: Feedback for multi-level signaling in a memory device
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Application No.: US17208885Application Date: 2021-03-22
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Publication No.: US11543995B2Publication Date: 2023-01-03
- Inventor: M. Ataul Karim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/22 ; G11C11/4076 ; H03K3/356 ; H03F3/45

Abstract:
Methods, systems, and devices for feedback for multi-level signaling in a memory device are described. A receiver may use a modulation scheme to communicate information with a host device. The receiver may include a first circuit, a second circuit, a third circuit, and a fourth circuit. Each of the first circuit, the second circuit, the third circuit, and the fourth circuit may determine, for a respective clock phase, a voltage level of a signal modulated using the modulation scheme. The receiver may include a first feedback circuit, a second feedback circuit, a third feedback circuit, and a fourth feedback circuit. The first feedback circuit that may use information received from the first circuit at the first clock phase and modify the signal input into the second circuit for the second clock phase.
Public/Granted literature
- US20220300188A1 FEEDBACK FOR MULTI-LEVEL SIGNALING IN A MEMORY DEVICE Public/Granted day:2022-09-22
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