Invention Grant
- Patent Title: Molecular layer deposition method and system
-
Application No.: US16935385Application Date: 2020-07-22
-
Publication No.: US11545354B2Publication Date: 2023-01-03
- Inventor: Bhaskar Bhuyan , Zeqing Shen , Bo Qi , Abhijit Basu Mallick , Xinke Wang , Mark Saly
- Applicant: Applied Materials, Inc. , National University of Singapore
- Applicant Address: US CA Santa Clara; SG Singapore
- Assignee: Applied Materials, Inc.,National University of Singapore
- Current Assignee: Applied Materials, Inc.,National University of Singapore
- Current Assignee Address: US CA Santa Clara; SG Singapore
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B05D1/00

Abstract:
Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.
Public/Granted literature
- US20220028686A1 MOLECULAR LAYER DEPOSITION METHOD AND SYSTEM Public/Granted day:2022-01-27
Information query
IPC分类: