Invention Grant
- Patent Title: Single diffusion breaks including stacked dielectric layers
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Application No.: US16994915Application Date: 2020-08-17
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Publication No.: US11545574B2Publication Date: 2023-01-03
- Inventor: Haiting Wang , Rinus Lee , Sipeng Gu , Yue Hu
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/78 ; H01L29/06 ; H01L29/66

Abstract:
Structures for a single diffusion break and methods of forming a structure for a single diffusion break. A cut is formed in a semiconductor fin. A single diffusion break includes a first dielectric layer in the cut and a second dielectric layer over the first dielectric layer. The first dielectric layer is comprised of a first material, and the second dielectric layer is comprised of a second material having a different composition than the first material. The second dielectric layer includes a first portion over the first dielectric layer and a second portion over the first portion. The first portion of the second dielectric layer has a first horizontal dimension, and the second portion of the second dielectric layer has a second horizontal dimension that is greater than the first horizontal dimension.
Information query
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