- Patent Title: Low power memory system using dual input-output voltage supplies
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Application No.: US17158485Application Date: 2021-01-26
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Publication No.: US11551730B2Publication Date: 2023-01-10
- Inventor: Jungwon Suh , Joon Young Park , Mahalingam Nagarajan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: The Marbury Law Group/Qualcomm
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/14 ; H03K7/02

Abstract:
Various embodiments include a computing device memory system having a memory device, a memory physical layer communicatively connected to the memory device, a first input/output (IO) voltage supply electrically connected to the memory device and to the memory physical layer, and a second IO voltage supply electrically connected to the memory device and to the memory physical layer, in which the memory device and the physical layer are configured to communicate data of a memory transaction using a 3 level pulse amplitude modulation (PAM) IO scheme.
Public/Granted literature
- US20220238142A1 Low Power Memory System Using Dual Input-Output Voltage Supplies Public/Granted day:2022-07-28
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