Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US17089822Application Date: 2020-11-05
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Publication No.: US11551978B2Publication Date: 2023-01-10
- Inventor: Young-Hun Kim , Jaeseok Yang , Haewang Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0133668 20181102
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/308 ; H01L27/088

Abstract:
Disclosed are semiconductor devices and methods of fabricating the same. The method comprises sequentially stacking a lower sacrificial layer and an upper sacrificial layer on a substrate, patterning the upper sacrificial layer to form a first upper sacrificial pattern and a second upper sacrificial pattern, forming a first upper spacer and a second upper spacer on sidewalls of the first upper sacrificial pattern and a second upper sacrificial pattern, respectively, using the first and second upper spacers as an etching mask to pattern the lower sacrificial layer to form a plurality of lower sacrificial patterns, forming a plurality of lower spacers on sidewalls of the lower sacrificial patterns, and using the lower spacers as an etching mask to pattern the substrate. The first and second upper spacers are connected to each other.
Public/Granted literature
- US20210057284A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-02-25
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