Invention Grant
- Patent Title: Transistor display panel having an auxiliary layer overlapping portions of source and gate electrodes
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Application No.: US17122859Application Date: 2020-12-15
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Publication No.: US11552108B2Publication Date: 2023-01-10
- Inventor: Byung Hwan Chu , Sho Yeon Kim , Wan-Soon Im , Yong Tae Cho
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2017-0135976 20171019
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G09G3/20 ; H01L29/423 ; H01L29/417

Abstract:
A transistor display panel including a substrate, a gate line disposed on the substrate and extending in a first direction, a gate electrode protruding from the gate line, a gate insulating layer disposed on the gate line and the gate electrode, a semiconductor layer and an auxiliary layer disposed on the gate insulating layer and spaced apart from each other, a data line disposed on the gate insulating layer and extending in a second direction which is a direction crossing the gate line, a drain electrode disposed on the gate insulating layer and the semiconductor layer and spaced apart from the data line, and a pixel electrode connected to the drain electrode, in which the auxiliary layer overlaps an edge of the gate electrode in a plan view.
Public/Granted literature
- US20210104553A1 TRANSISTOR DISPLAY PANEL HAVING AN AUXILIARY LAYER OVERLAPPING PORTIONS OF SOURCE AND GATE ELECTRODES Public/Granted day:2021-04-08
Information query
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