- 专利标题： Self-alignment etching of interconnect layers
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申请号： US16691453申请日： 2019-11-21
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公开(公告)号： US11557509B1公开(公告)日： 2023-01-17
- 发明人: Suketu Arun Parikh
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/3213
摘要：
A method for etching a metal containing feature is provided. Using a pattern mask, layers of material are etched to expose a portion of a metal containing feature. At least a portion of the exposed metal containing feature is etched, and is replaced by the growth of a filler dielectric. The etched portion of the metal containing feature and the filler dielectric reduce the unwanted conductivity between adjacent metal containing features.
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