- 专利标题： Semiconductor device having a translation feature and method therefor
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申请号： US17004425申请日： 2020-08-27
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公开(公告)号： US11557544B2公开(公告)日： 2023-01-17
- 发明人: Michael B. Vincent , Giorgio Carluccio , Scott M. Hayes
- 申请人： NXP USA, INC.
- 申请人地址： US TX Austin
- 专利权人： NXP USA, INC.
- 当前专利权人： NXP USA, INC.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01Q1/22 ; H01Q21/06 ; H01L23/498 ; H01Q1/32 ; H01Q15/14 ; H01L23/31
摘要：
A semiconductor device is provided. The device includes a semiconductor die and a launcher structure attached to a package substrate. The launcher structure includes a launcher substrate, a launcher portion formed from a conductive layer at a major surface of the launcher substrate, and a translation pad formed from the conductive layer at the major surface. The translation pad is separate from the launcher portion. A translation feature is formed on the translation pad. The translation feature is configured for alignment of a waveguide structure.
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