Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor image sensor and method of making
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Application No.: US17212865Application Date: 2021-03-25
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Publication No.: US11557626B2Publication Date: 2023-01-17
- Inventor: Bo-Tsung Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/266 ; H01L29/78 ; H01L21/265
Abstract:
A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a gate structure over the bulk, wherein a top surface of the gate structure is above a top surface of the floating diffusion node. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.
Public/Granted literature
- US20210210545A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR IMAGE SENSOR AND METHOD OF MAKING Public/Granted day:2021-07-08
Information query
IPC分类:
