- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US17115204申请日： 2020-12-08
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公开(公告)号： US11557648B2公开(公告)日： 2023-01-17
- 发明人: Hiroshi Yanagigawa , Katsumi Eikyu , Masami Sawada , Akihiro Shimomura , Kazuhisa Mori
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JPJP2020-004433 20200115
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/66 ; H01L29/78
摘要：
In a trench gate type power MOSFET having a super-junction structure, both improvement of a breakdown voltage of a device and reduction of on-resistance are achieved. The trench gate and a column region are arranged so as to be substantially orthogonal to each other in a plan view, and a base region (channel forming region) and the column region are arranged separately in a cross-sectional view.
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