Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US17099994Application Date: 2020-11-17
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Publication No.: US11563017B2Publication Date: 2023-01-24
- Inventor: Kyoung-Hee Kim , Woo Choel Noh , Ik Soo Kim , Jun Kwan Kim , Jinsub Kim , Yongjin Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2020-0064170 20200528
- Main IPC: H01L27/11539
- IPC: H01L27/11539 ; H01L27/11519 ; H01L27/11578 ; H01L27/11565 ; H01L27/11573 ; H01L27/11551

Abstract:
A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
Public/Granted literature
- US20210375896A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2021-12-02
Information query
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