- 专利标题： Structure and method for an MRAM device with a multi-layer top electrode
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申请号： US16510296申请日： 2019-07-12
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公开(公告)号： US11563167B2公开(公告)日： 2023-01-24
- 发明人: Wei-Hao Liao , Hsi-Wen Tien , Chih-Wei Lu , Pin-Ren Dai , Chung-Ju Lee
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/12 ; G11C11/16 ; H01L27/22
摘要：
A magnetic memory device includes a bottom electrode, a magnetic tunneling junction disposed over the bottom electrode, and a top electrode disposed over the magnetic tunneling junction, wherein the top electrode includes a first top electrode layer and a second top electrode layer above the first top electrode layer, and wherein the second top electrode layer is thicker than the first top electrode layer.
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