- 专利标题: Cadmium-free semiconductor nanocrystal particles having high quantum efficiency, production methods thereof, and devices including the same
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申请号: US16281232申请日: 2019-02-21
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公开(公告)号: US11566345B2公开(公告)日: 2023-01-31
- 发明人: Jin A Kim , Yuho Won , Sung Woo Kim , Tae Hyung Kim , Jeong Hee Lee , Eun Joo Jang
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2018-0020799 20180221
- 主分类号: B32B5/16
- IPC分类号: B32B5/16 ; B05D7/00 ; B82Y20/00 ; C30B29/48 ; C01G9/08 ; H01L51/50 ; H01L33/28 ; C09K11/02 ; C09K11/56 ; C09K11/88 ; H01L33/06 ; B82Y40/00
摘要:
A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.
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