Invention Grant
- Patent Title: Memory device including interface circuit for data conversion according to different endian formats
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Application No.: US17213732Application Date: 2021-03-26
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Publication No.: US11567692B2Publication Date: 2023-01-31
- Inventor: Seongil O , Jongpil Son , Kyomin Sohn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2020-0059971 20200519
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory device including an interface circuit for data conversion according to different endian formats includes an interface circuit that performs data conversion with hardware in a data transfer path inside the memory device in accordance with a memory bank, a processing element (PE), and an endian format of a host device. The interface circuit is (i) between a memory physical layer interface (PHY) region and a serializer/deserializer (SERDES) region, (ii) between the SERDES region and the memory bank or the PE, (iii) between the SERDES region and a bank group input/output line coupled to a bank group including a number of memory banks, and (iv) between the PE and bank local input/output lines coupled to the memory bank.
Public/Granted literature
- US20210365203A1 MEMORY DEVICE INCLUDING INTERFACE CIRCUIT FOR DATA CONVERSION ACCORDING TO DIFFERENT ENDIAN FORMATS Public/Granted day:2021-11-25
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