Invention Grant
- Patent Title: Method of deep learning-based examination of a semiconductor specimen and system thereof
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Application No.: US16892123Application Date: 2020-06-03
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Publication No.: US11568531B2Publication Date: 2023-01-31
- Inventor: Ohad Shaubi , Denis Suhanov , Assaf Asbag , Boaz Cohen
- Applicant: APPLIED MATERIALS ISRAEL LTD.
- Applicant Address: IL Rehovot
- Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06K9/62 ; G06V10/40 ; G06V10/98

Abstract:
There is provided a method of examination of a semiconductor specimen and a system thereof. The method comprises: using a trained Deep Neural Network (DNN) to process a fabrication process (FP) sample, wherein the FP sample comprises first FP image(s) received from first examination modality(s) and second FP image(s) received from second examination modality(s) which differs from the first examination modality(s), and wherein the trained DNN processes the first FP image(s) separately from the second FP image(s); and further processing by the trained DNN the results of such separate processing to obtain examination-related data specific for the given application and characterizing at least one of the processed FP images. When the FP sample further comprises numeric data associated with the FP image(s), the method further comprises processing by the trained DNN at least part of the numeric data separately from processing the first and the second FP images.
Public/Granted literature
- US20200294224A1 METHOD OF DEEP LEARNING-BASED EXAMINATION OF A SEMICONDUCTOR SPECIMEN AND SYSTEM THEREOF Public/Granted day:2020-09-17
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