Invention Grant
- Patent Title: Area-selective atomic layer deposition of passivation layers
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Application No.: US17081498Application Date: 2020-10-27
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Publication No.: US11569088B2Publication Date: 2023-01-31
- Inventor: Yong Wang , Andrea Leoncini , Doreen Wei Ying Yong , John Sudijono
- Applicant: Applied Materials, Inc. , National University of Singapore
- Applicant Address: US CA Santa Clara; SG Singapore
- Assignee: Applied Materials, Inc.,National University of Singapore
- Current Assignee: Applied Materials, Inc.,National University of Singapore
- Current Assignee Address: US CA Santa Clara; SG Singapore
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02
Abstract:
Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
Public/Granted literature
- US20220130659A1 Area-Selective Atomic Layer Deposition Of Passivation Layers Public/Granted day:2022-04-28
Information query
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