- 专利标题： Fin field effect transistor (FinFET) device structure with dummy Fin structure
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申请号： US17031023申请日： 2020-09-24
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公开(公告)号： US11569130B2公开(公告)日： 2023-01-31
- 发明人: Tzung-Yi Tsai , Yen-Ming Chen , Tsung-Lin Lee , Chih-Chieh Yeh
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L27/088
摘要：
A fin field effect transistor (FinFET) device structure with dummy fin structures and method for forming the same are provided. The FinFET device structure includes an isolation structure over a substrate, and a first fin structure extended above the isolation structure. The fin field effect transistor (FinFET) device structure includes a second fin structure adjacent to the first fin structure, and a material layer formed over the fin structure. The material layer and the isolation structure are made of different materials, the material layer has a top surface with a top width and a bottom surface with a bottom width, and the bottom width is greater than the top width.
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