- 专利标题: Semiconductor device and manufacturing method thereof
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申请号: US17123664申请日: 2020-12-16
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公开(公告)号: US11569166B2公开(公告)日: 2023-01-31
- 发明人: Te-Hsin Chiu , Wei-An Lai , Meng-Hung Shen , Wei-Cheng Lin , Jiann-Tyng Tzeng , Kam-Tou Sio
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L23/522 ; H01L21/768
摘要:
The present disclosure provides a semiconductor structure, including a substrate, a first metal line over the substrate and extending along a first direction, a protection layer lining a sidewall of the first metal line, a second metal line above the first metal line and extending along the first direction, and a third metal line above the second metal line, extending along a second direction perpendicular to the first direction.
公开/授权文献
- US20220068791A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2022-03-03
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