- 专利标题: Methods for forming conductive vias, and associated devices and systems
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申请号: US17230833申请日: 2021-04-14
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公开(公告)号: US11574842B2公开(公告)日: 2023-02-07
- 发明人: Trupti D. Gawai , David A. Kewley , Aaron M. Lowe , Radhakrishna Kotti , David S. Pratt
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/535
摘要:
Methods of manufacturing semiconductor devices, and associated systems and devices, are disclosed herein. In some embodiments, a method of manufacturing a semiconductor device includes forming an opening in an insulative material at least partially over an electrically conductive feature. The method can further include forming a ring of electrically non-conductive material extending at least partially about a sidewall of the insulative material that defines the opening. The method can further include removing a portion of the ring to form an opening over the electrically conductive feature, and then depositing an electrically conductive material into the opening in the ring to form a conductive via electrically coupled to the electrically conductive feature.
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