Invention Grant
- Patent Title: Power module comprising two substrates and method of manufacturing the same
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Application No.: US13909133Application Date: 2013-06-04
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Publication No.: US11574889B2Publication Date: 2023-02-07
- Inventor: Ottmar Geitner , Wolfram Hable , Andreas Grassmann , Frank Winter , Christian Neugirg , Ivan Nikitin
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/00 ; H01L23/495 ; H01L23/373 ; H01L23/31 ; H01L25/00 ; H01L23/433
Abstract:
A method of manufacturing a power module comprising two substrates is provided, wherein the method comprises disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a second thickness after the second substrate is disposed on the compensation layer.
Public/Granted literature
- US20140353818A1 Power module comprising two substrates and method of manufacturing the same Public/Granted day:2014-12-04
Information query
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