- 专利标题： Semiconductor device with low dark noise
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申请号： US16709848申请日： 2019-12-10
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公开(公告)号： US11574942B2公开(公告)日： 2023-02-07
- 发明人: Yun-Chung Na , Yen-Cheng Lu , Ming-Jay Yang , Szu-Lin Cheng
- 申请人： Artilux, Inc.
- 申请人地址： US CA Menlo Park
- 专利权人： Artilux, Inc.
- 当前专利权人： Artilux, Inc.
- 当前专利权人地址： US CA Menlo Park
- 代理机构： Fish & Richardson P.C.
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; H01L29/167
摘要：
A semiconductor device includes a germanium region, a doped region in the germanium region, wherein the doped region is of a first conductivity type; and a counter-doped region in the germanium region and adjacent to the doped region, wherein the counter-doped region is of a second conductivity type different from the first conductivity type.
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