Invention Grant
- Patent Title: Fabric driven non-volatile memory express subsystem zoning
-
Application No.: US17318931Application Date: 2021-05-12
-
Publication No.: US11579808B2Publication Date: 2023-02-14
- Inventor: Asutosh Satapathy , Komateswar Dhanadevan , Krishna Babu Puttagunta , Vivek Agarwal , Rupin T. Mohan , Govind Chandru Rathod
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
In some examples, fabric driven NVMe subsystem zoning may include receiving, from a non-volatile memory express (NVMe) Name Server (NNS), a zoning specification that includes an indication of a host that is to communicate with a given NVMe subsystem of an NVMe storage domain. Based on the zoning specification, the host may be designated as being permitted to connect to the given NVMe subsystem of the NVMe storage domain. An NVMe connect command may be received from the host. Based on the designation and an analysis of the NVMe connect command, a connection may be established between the given NVMe subsystem of the NVMe storage domain and the host.
Public/Granted literature
- US20210263686A1 FABRIC DRIVEN NON-VOLATILE MEMORY EXPRESS SUBSYSTEM ZONING Public/Granted day:2021-08-26
Information query