- 专利标题: Semiconductor device
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申请号: US17237648申请日: 2021-04-22
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公开(公告)号: US11581320B2公开(公告)日: 2023-02-14
- 发明人: Fei Zhou
- 申请人: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址: CN Shanghai; CN Beijing
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址: CN Shanghai; CN Beijing
- 代理机构: Anova Law Group, PLLC
- 优先权: CN201810993685.2 20180829
- 主分类号: H01L27/11
- IPC分类号: H01L27/11 ; H01L27/088 ; H01L29/66 ; H01L23/528 ; H01L29/78 ; H01L29/06 ; H01L21/02 ; H01L21/768 ; H01L21/3213 ; H01L21/8234
摘要:
Semiconductor device is provided. The semiconductor device includes a base substrate including a first region, a second region, and a third region arranged along a first direction, a first doped layer in the base substrate at the first region and a second doped layer in the base substrate at the third region, a first gate structure on the base substrate at the second region, a first dielectric layer on the base substrate coving the first doped layer, the second doped layer, and sidewalls of the first gate structure, first trenches in the first dielectric layer at the first region and the third region respectively, a first conductive layer in the first trenches, a second conductive layer on a surface of the first conductive layer at the second sub-regions after forming the first conductive layer, and a third conductive layer on the contact region of the first gate structure.
公开/授权文献
- US20210242218A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-08-05