A method and apparatus include an n-doped layer having a first applied charge, and a p−-doped layer having a second applied charge. The p−-doped layer may be positioned below the n-doped layer. A p+-doped buffer layer may have a third applied charge and be positioned below the p−-doped layer. The respective charges at each layer may be determined based on a dopant level and a physical dimension of the layer. In one example, the n-doped layer, the p−-doped layer, and the p+-doped buffer layer comprise a lateral semiconductor manufactured from silicon carbide (SiC).