Invention Grant
- Patent Title: QLED light-emitting device and QLED display panel having insulating layer among quantum dot layer
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Application No.: US16954331Application Date: 2020-06-05
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Publication No.: US11588126B2Publication Date: 2023-02-21
- Inventor: Jinyang Zhao
- Applicant: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: PV IP PC
- Agent Wei Te Chung; Ude Lu
- Priority: CN202010323410.5 20200422
- International Application: PCT/CN2020/094503 WO 20200605
- International Announcement: WO2021/212619 WO 20211028
- Main IPC: H01L51/50
- IPC: H01L51/50

Abstract:
A QLED light-emitting device is provided, including a first electrode layer, an electron injection layer, an electron transport layer, a light-emitting layer, a hole transport layer, a hole injection layer, and a second electrode layer. Wherein, the light-emitting layer includes a plurality of quantum dot layers disposed in a stack, and insulating layers are disposed among the quantum dot layers adjacent to one side of the electron injection layer. Through disposing the insulating layers among the quantum dot layers adjacent to the one side of the electron injection layer, an electron transmission rate is reduced, thereby balancing the electron transmission rate and a hole transmission rate and improving luminous efficiency of QLEDs.
Public/Granted literature
- US20220310952A1 QLED LIGHT-EMITTING DEVICE AND QLED DISPLAY PANEL Public/Granted day:2022-09-29
Information query
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