Invention Grant
- Patent Title: Defect detection structure of a semiconductor die, semiconductor device including the same and method of detecting defects in semiconductor die
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Application No.: US17356152Application Date: 2021-06-23
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Publication No.: US11600539B2Publication Date: 2023-03-07
- Inventor: Min-Jae Lee , Sang-Lok Kim , Byung-Hoon Jeong , Tae-Sung Lee , Jeong-Don Ihm , Jae-Yong Jeong , Young-Don Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2018-0111542 20180918
- Main IPC: G01R31/64
- IPC: G01R31/64 ; H01L21/66 ; H01L23/528 ; G01R31/3187

Abstract:
A semiconductor device includes a semiconductor die, a defect detection structure and an input-output circuit. The semiconductor die includes a central region and a peripheral region surrounding the central region. The peripheral region includes a left-bottom corner region, a left-upper corner region, a right-upper corner region and a right-bottom corner region. The defect detection structure is formed in the peripheral region. The defect detection structure includes a first conduction loop in the left-bottom corner region, a second conduction loop in the right-bottom corner region, a third conduction loop in the left-bottom corner region and the left-upper corner region and a fourth conduction loop in the right-bottom corner region and the right-upper corner region. The input-output circuit is electrically connected to end nodes of the first conduction loop, the second conduction loop, the third conduction loop and the fourth conduction loop.
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