Invention Grant
- Patent Title: Redistribution substrate, method of fabricating the same, and semiconductor package including the same
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Application No.: US17189964Application Date: 2021-03-02
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Publication No.: US11600564B2Publication Date: 2023-03-07
- Inventor: Jongyoun Kim , Seokhyun Lee , Minjun Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0109695 20180913
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L23/31 ; H01L23/528 ; H01L21/56 ; H01L21/768

Abstract:
A method is provided and includes forming a first conductive pattern; forming a photosensitive layer on the first conductive pattern, the photosensitive layer having a first through hole exposing a portion of the first conductive pattern; forming a first via in the first through hole; removing the photosensitive layer; forming a dielectric layer encapsulating the first conductive pattern and the first via, the dielectric layer exposing a top surface of the first via; forming a second conductive pattern on the top surface of the first via, forming a dielectric layer covering the second conductive pattern; etching the dielectric layer to form a second through hole that exposes a portion of the second conductive pattern; forming a second via filling the second through hole and an under bump pad on the second via; and mounting a semiconductor chip on the under bump pad using a connection terminal.
Public/Granted literature
- US20210183766A1 REDISTRIBUTION SUBSTRATE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME Public/Granted day:2021-06-17
Information query
IPC分类: