Invention Grant
- Patent Title: Three-dimensional semiconductor memory device and electronic system including the same
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Application No.: US17204394Application Date: 2021-03-17
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Publication No.: US11600609B2Publication Date: 2023-03-07
- Inventor: Jungtae Sung , Junyoung Choi , Jiyoung Kim , Yoonjo Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2020-0115958 20200910
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/00 ; H01L27/11529 ; H01L27/11556 ; H01L27/11573 ; H01L27/11582 ; H01L25/00 ; H01L25/065

Abstract:
Disclosed are three-dimensional semiconductor memory devices and electronic systems including the same. The three-dimensional semiconductor memory device comprises a first structure and a second structure in contact with the first structure. Each of the first and second structures includes a substrate, a peripheral circuit region on the substrate, and a cell array region including a stack structure on the peripheral circuit region, a plurality of vertical structures that penetrate the stack structure, and a common source region in contact with the vertical structures. The stack structure is between the peripheral circuit region and the common source region. The common source regions of the first and second structures are connected with each other.
Public/Granted literature
- US20220077129A1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME Public/Granted day:2022-03-10
Information query
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