Invention Grant
- Patent Title: Semiconductor device with fin end spacer and method of manufacturing the same
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Application No.: US17141126Application Date: 2021-01-04
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Publication No.: US11605562B2Publication Date: 2023-03-14
- Inventor: Tung Ying Lee , Tzu-Chung Wang , Kai-Tai Chang , Wei-Sheng Yun
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/417 ; H01L29/423 ; H01L29/04 ; H01L29/78
Abstract:
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a plurality of fins on a substrate. A fin end spacer is formed on an end surface of each of the plurality of fins. An insulating layer is formed on the plurality of fins. A source/drain epitaxial layer is formed in a source/drain space in each of the plurality of fins. A gate electrode layer is formed on the insulating layer and wrapping around the each channel region. Sidewall spacers are formed on the gate electrode layer.
Public/Granted literature
- US20210217665A1 SEMICONDUCTOR DEVICE WITH FIN END SPACER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-07-15
Information query
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