Invention Grant
- Patent Title: Method for processing a FinFET device
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Application No.: US17210110Application Date: 2021-03-23
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Publication No.: US11610980B2Publication Date: 2023-03-21
- Inventor: Boon Teik Chan , Changyong Xiao , Jie Chen
- Applicant: IMEC VZW
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP20165087 20200324
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/762 ; H01L29/06 ; H01L29/40 ; H01L29/423

Abstract:
A method for processing a forksheet device includes providing a substrate and forming a trench in the substrate, extending along a first direction, in the substrate. The formation of the trench includes forming a grating structure on the substrate that includes a pair of maskings, arranged at a distance from each other, and etching the trench into the substrate in a region between the pair of maskings. The method also includes filling the trench with a filling material and partially recessing the substrate to form a fin structure. This fin structure includes the filled trench, a first section of the substrate at a first side of the filled trench and a second section of the substrate at a second side of the filled trench, and forming a gate structure on and around the fin structure. The method additionally includes forming a gate structure on and around the fin structure.
Public/Granted literature
- US20210305412A1 METHOD FOR PROCESSING A FINFET DEVICE Public/Granted day:2021-09-30
Information query
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