- 专利标题: Selective EMI shielding using preformed mask with fang design
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申请号: US17126621申请日: 2020-12-18
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公开(公告)号: US11616025B2公开(公告)日: 2023-03-28
- 发明人: ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
- 申请人: STATS ChipPAC Pte. Ltd.
- 申请人地址: SG Singapore
- 专利权人: STATS ChipPAC Pte. Ltd.
- 当前专利权人: STATS ChipPAC Pte. Ltd.
- 当前专利权人地址: SG Singapore
- 代理机构: Patent Law Group: Atkins and Associates, P.C.
- 代理商 Brian M. Kaufman; Robert D. Atkins
- 主分类号: H01L23/552
- IPC分类号: H01L23/552 ; H01L23/00 ; H01L21/56 ; H01L21/033 ; H01L23/31
摘要:
A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.
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