Invention Grant
- Patent Title: Semiconductor memory device, memory system, and write method
-
Application No.: US17874968Application Date: 2022-07-27
-
Publication No.: US11621039B2Publication Date: 2023-04-04
- Inventor: Noboru Shibata , Yasuyuki Matsuda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JPJP2018-146833 20180803
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C11/408 ; G11C16/08

Abstract:
According to one embodiment, a memory system includes a semiconductor memory device including a memory cell capable of holding at least 4-bit data and a controller configured to control a first write operation and a second write operation based on the 4-bit data. The controller includes a conversion circuit configured to convert 4-bit data into 2-bit data. The semiconductor memory device includes a recovery controller configured to recover the 4-bit data based on the converted 2-bit data and data written in the memory cell by the first write operation. The first write operation is executed based on the 4-bit data received from the controller, and the second write operation is executed based on the 4-bit data recovered by the recovery controller.
Public/Granted literature
- US20220366973A1 SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM, AND WRITE METHOD Public/Granted day:2022-11-17
Information query