Invention Grant
- Patent Title: Methods of defect inspection
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Application No.: US17063386Application Date: 2020-10-05
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Publication No.: US11624985B2Publication Date: 2023-04-11
- Inventor: Ta-Ching Yu , Shih-Che Wang , Shu-Hao Chang , Yi-Hao Chen , Chen-Yen Kao , Te-Chih Huang , Yuan-Fu Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G03F7/20 ; G01N21/956 ; H01L21/027 ; G01N21/89 ; G06T7/00 ; G01N21/88

Abstract:
Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
Public/Granted literature
- US20210018848A1 METHODS OF DEFECT INSPECTION Public/Granted day:2021-01-21
Information query
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