Invention Grant
- Patent Title: Interconnection structure of a semiconductor chip and semiconductor package including the interconnection structure
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Application No.: US17213025Application Date: 2021-03-25
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Publication No.: US11626370B2Publication Date: 2023-04-11
- Inventor: Keumhee Ma , Chulyong Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2020-0122984 20200923
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538 ; H01L23/00 ; H01L23/498

Abstract:
An interconnection structure of a semiconductor chip may include an interconnection via, a lower pad, a conductive bump, and an upper pad. The interconnection via may be arranged in the semiconductor chip. The lower pad may be arranged on a lower end of the interconnection via exposed through a lower surface of the semiconductor chip. The conductive bump may be arranged on the lower pad. The upper pad may be arranged on an upper end of the interconnection via exposed through an upper surface of the semiconductor chip. The upper pad may have a width wider than a width of the interconnection via and narrower than a width of the lower pad. Thus, an electrical short between the conductive bumps may not be generated in the interconnection structure having a thin thickness.
Public/Granted literature
Information query
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