- 专利标题: Process and device for low-temperature pressure sintering
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申请号: US17126139申请日: 2020-12-18
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公开(公告)号: US11626383B2公开(公告)日: 2023-04-11
- 发明人: Ronald Eisele , Holger Ulrich
- 申请人: DANFOSS SILICON POWER GMBH
- 申请人地址: DE Flensburg
- 专利权人: DANFOSS SILICON POWER GMBH
- 当前专利权人: DANFOSS SILICON POWER GMBH
- 当前专利权人地址: DE Flensburg
- 代理机构: McCormick, Paulding & Huber PLLC
- 优先权: DE102014114093.1 20140929
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L23/00 ; H05K3/32 ; B22F3/14
摘要:
Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.
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