- 专利标题： Method for regulating inert gas flow, method for preparing monocrystalline silicon, and monocrystalline silicon
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申请号： US16912885申请日： 2020-06-26
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公开(公告)号： US11629985B2公开(公告)日： 2023-04-18
- 发明人: Hao Pan , Hyunguk Jeon
- 申请人： XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD. , XI'AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD.
- 申请人地址： CN Xi'an; CN Xi'an
- 专利权人： XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.,XI'AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD.
- 当前专利权人： XI'AN ESWIN MATERIAL TECHNOLOGY CO., LTD.,XI'AN ESWIN SILICON WAFER TECHNOLOGY CO., LTD.
- 当前专利权人地址： CN Xi'an; CN Xi'an
- 代理机构： Maginot, Moore & Beck LLP
- 优先权： CN201910561681.1 20190626
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; G01F3/22 ; F26B21/00 ; C30B27/02 ; C30B29/06 ; F26B21/02
摘要：
The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.
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