Invention Grant
- Patent Title: Generating die block mapping after detected failure
-
Application No.: US17211601Application Date: 2021-03-24
-
Publication No.: US11630727B2Publication Date: 2023-04-18
- Inventor: Woei Chen Peh , Xiaoxin Zou , Chandra Mouli Guda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G06F11/10 ; G06F11/07 ; G06F12/0891 ; G06F12/02 ; G06F12/0804

Abstract:
A memory device includes a plurality of memory die blocks and a plurality of memory channels operably coupled to the plurality of memory die blocks and a memory controller configured to identify one or more memory die blocks as being invalid. The memory controller obtains a first matrix storing a mapping of memory channels to memory die blocks and creates a new mapping of memory channels to memory die blocks excluding the invalid memory die blocks. The new mapping is stored in a second matrix and one or more operations are performed on the memory die blocks based on the new mapping.
Public/Granted literature
- US20220308958A1 GENERATING DIE BLOCK MAPPING AFTER DETECTED FAILURE Public/Granted day:2022-09-29
Information query