- 专利标题: Process of realization on a plate of a plurality of chips, each with an individualization area
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申请号: US17216828申请日: 2021-03-30
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公开(公告)号: US11631646B2公开(公告)日: 2023-04-18
- 发明人: Stefan Landis , Michaël May
- 申请人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址: FR Paris
- 专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址: FR Paris
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: FR2003111 20200330
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/768
摘要:
A method for producing a plurality of chips each comprising an individualisation region, each chip comprising at least: a first and a second level of the electrical tracks, and an interconnections level comprising vias. The method includes producing on the dielectric layer covering the first level a mask having openings located in line with the electrical tracks and making the dielectric layer accessible. The method includes producing, in a region of the chip comprising the individualisation region, patterns conformed so that: first openings of the hard mask are not masked by the patterns, and second openings of the hard mask are masked by the patterns. The method includes producing via openings in the dielectric layer in line solely with the first openings. The method further includes filling in the via openings with an electrically conductive material, and producing the second level of the electrical tracks on the vias.
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