发明授权
- 专利标题: Bump structure having a side recess and semiconductor structure including the same
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申请号: US17075904申请日: 2020-10-21
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公开(公告)号: US11631648B2公开(公告)日: 2023-04-18
- 发明人: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/00
摘要:
The present disclosure relates to an integrated chip structure having a first copper pillar disposed over a metal pad of an interposer substrate. The first copper pillar has a sidewall defining a recess. A nickel layer is disposed over the first copper pillar and a solder layer is disposed over the first copper pillar and the nickel layer. The solder layer continuously extends from directly over the first copper pillar to within the recess. A second copper layer is disposed between the solder layer and a second substrate.
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