Invention Grant
- Patent Title: Integrated circuit having angled conductive feature
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Application No.: US17317216Application Date: 2021-05-11
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Publication No.: US11631661B2Publication Date: 2023-04-18
- Inventor: Tung-Heng Hsieh , Ting-Wei Chiang , Chung-Te Lin , Hui-Zhong Zhuang , Li-Chun Tien , Sheng-Hsiung Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/39 ; G06F30/392 ; G06F30/398 ; H01L23/528 ; H01L27/092

Abstract:
An integrated circuit includes a first gate electrode structure extending in a first direction and having a first portion and a second portion separated from each other. The integrated circuit further includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit further includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, wherein the first section extends in the second direction. The conductive feature further includes a second section electrically connected to the second gate electrode structure, wherein the second section extends in the second direction. The conductive feature further includes a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.
Public/Granted literature
- US20210280572A1 INTEGRATED CIRCUIT HAVING ANGLED CONDUCTIVE FEATURE Public/Granted day:2021-09-09
Information query
IPC分类: