- 专利标题： Semiconductor device
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申请号： US17452069申请日： 2021-10-25
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公开(公告)号： US11631665B2公开(公告)日： 2023-04-18
- 发明人: Yuichi Harada
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kawasaki
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kawasaki
- 优先权： JPJP2017-221127 20171116,JPJP2018-113413 20180614
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/40 ; H01L29/739 ; H01L29/861
摘要：
Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.
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