- 专利标题: Solid-state imaging device and electronic device
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申请号: US17862716申请日: 2022-07-12
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公开(公告)号: US11632510B2公开(公告)日: 2023-04-18
- 发明人: Keiichiro Takahashi
- 申请人: Sony Semiconductor Solutions Corporation
- 申请人地址: JP Kanagawa
- 专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人: Sony Semiconductor Solutions Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Michael Best & Friedrich LLP
- 优先权: JPJP2017-129599 20170630
- 主分类号: H04N5/374
- IPC分类号: H04N5/374 ; H04N5/378 ; H04N5/232 ; H04N9/04 ; G02B7/34 ; H01L27/146 ; H04N5/369 ; H04N5/3745
摘要:
The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing.
Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.
Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.
公开/授权文献
- US20220368845A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE 公开/授权日:2022-11-17
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