- 专利标题: Exposure method, exposure apparatus, article manufacturing method, and method of manufacturing semiconductor device
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申请号: US17018768申请日: 2020-09-11
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公开(公告)号: US11640119B2公开(公告)日: 2023-05-02
- 发明人: Tetsuya Yamamoto
- 申请人: CANON KABUSHIKI KAISHA
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 代理机构: Rossi, Kimms & McDowell LLP
- 优先权: JPJP2019-170804 20190919
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
An exposure method of performing an exposure operation of exposing a substrate via a projection optical system is provided. The method includes executing, in an exposure period in which the exposure operation is performed, aberration correction of the projection optical system to correct an aberration generated by performing the exposure operation, measuring, in a non-exposure period succeeding the exposure period, in which the exposure operation is not performed, an aberration of the projection optical system, and correcting the aberration of the projection optical system using a correction amount adjusted based on a result of the measurement so as to reduce a correction residual in the aberration correction of the projection optical system.
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