- 专利标题： Semiconductor device formed on SOI substrate
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申请号： US17460998申请日： 2021-08-30
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公开(公告)号： US11640938B2公开(公告)日： 2023-05-02
- 发明人: Ki Won Lim , Jin Hyo Jung , Hae Taek Kim , Seung Hyun Eom , Ja Geon Koo , Hyun Joong Lee , Sang Yong Lee
- 申请人： DB HITEK CO., LTD.
- 申请人地址： KR Seoul
- 专利权人： DB HITEK CO., LTD.
- 当前专利权人： DB HITEK CO., LTD.
- 当前专利权人地址： KR Seoul
- 代理机构： Patterson Thuente IP
- 优先权： KR10-2020-0109978 20200831
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L23/528 ; H01L27/12
摘要：
A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.
公开/授权文献
- US20220068793A1 SEMICONDUCTOR DEVICE FORMED ON SOI SUBSTRATE 公开/授权日：2022-03-03
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