Invention Grant
- Patent Title: Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
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Application No.: US17344057Application Date: 2021-06-10
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Publication No.: US11640960B2Publication Date: 2023-05-02
- Inventor: Timothy E. Boles , Wayne Mack Struble
- Applicant: MACOM Technology Solutions Holdings, Inc.
- Applicant Address: US MA Lowell
- Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee: MACOM Technology Solutions Holdings, Inc.
- Current Assignee Address: US MA Lowell
- Agency: Perilla Knox & Hildebrandt LLP
- Agent Jason M. Perilla
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/762 ; H01L27/12 ; H01L21/02 ; H01L23/66
Abstract:
A number of integrated circuits and methods of manufacturing the integrated circuits are described. An integrated circuit can include different semiconductor devices formed from different semiconductor systems in different regions over the same substrate. The integrated circuit can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Public/Granted literature
- US20210305237A1 HETEROLITHIC MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON INTRINSIC SEMICONDUCTOR Public/Granted day:2021-09-30
Information query
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