Invention Grant
- Patent Title: Capacitor structure including patterned conductive layer disposed between two electrodes and manufacturing method thereof
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Application No.: US17359655Application Date: 2021-06-28
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Publication No.: US11640970B2Publication Date: 2023-05-02
- Inventor: Chih-Tung Yeh , Kuang-Pi Lee , Wen-Jung Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202110598854.4 20210531
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02

Abstract:
A capacitor structure includes an insulation layer and a capacitor unit disposed on the insulation layer. The capacitor unit includes a first electrode, a second electrode, a first dielectric layer, and a patterned conductive layer. The second electrode is disposed above the first electrode in a vertical direction. The first dielectric layer is disposed between the first electrode and the second electrode in the vertical direction. The patterned conductive layer is disposed between first electrode and the second electrode, the patterned conductive layer is electrically connected with the first electrode, and the first dielectric layer surrounds the patterned conductive layer in a horizontal direction.
Public/Granted literature
- US20220384562A1 CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-12-01
Information query
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