Invention Grant
- Patent Title: Low-speed memory operation
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Application No.: US16838873Application Date: 2020-04-02
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Publication No.: US11644985B2Publication Date: 2023-05-09
- Inventor: Kang-Yong Kim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F12/02

Abstract:
Methods, systems, and devices for a low-speed memory operation are described. A controller associated with a memory device may, for example, identify a clock mode for a system clock and determine that a speed of the system clock is below a threshold. The controller may generate (or cause to be generated) an internal data clock signal having a shorter period than an external data clock signal (which may have a speed based on the system clock speed). Also, the controller may use, instead of the external data clock signal, the internal data clock signal to generate data from the memory device, which may provide reduced latency. Further, the controller may deactivate (or cause to be deactivated) an external data clock that generates the external data clock signal.
Public/Granted literature
- US20200233592A1 LOW-SPEED MEMORY OPERATION Public/Granted day:2020-07-23
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